What is p-n junction ? Explain briefly, with the help of suitable diagram, how a p-n junction is formed. Define the term Potential barrier and depletion region
Physics
Class 12
811
Prisha
When a semiconductor crystal is so prepared that, it’s one half is p-type and other is n-type, then the contact surface dividing the two halves, is called p-n junction
Formation of p-n junction : potential barrier & depletion region
Diffusion and drift are the two important processes involved during the formation of a p-n junction.
Due to different concentration gradient of the charge carriers on two sides of the junction, electrons from n-sides starts moving towards p-sides and holes start moving from to p-side to n-side. This process is called Diffusion.
Due to diffusion, positive space charge region is created on the n-side of the junction and negative space charge region is created on the p-side of the junction. Hence an electric field called Junction field is set up from n-side to p-side which forces the minority charge carriers to cross the junction. This process is called Drift.
The potential difference developed across the p-n junction due to diffusion of majority charge carriers, which prevents the further movement of majority charge carriers through it, is called potential barrier. For Si, VB = 0.7 V and for Ge, VB =0.3 V The small space charge region on either side of the p-n junction, which becomes depleted from mobile charge carriers is known as depletion region ( 10–6 m).